The development of power-efficient spintronic devices has been a compelling need in the post-CMOS technology era. The effective tuneability of spin-orbit coupling (SOC) in the bulk and at the interfaces of hybrid material stacks is a prerequisite for scaling down the dimensions and power consumption of these devices. In this work, we demonstrate the strong chemisorption of C60 (fullerene) molecules when grown on the high-SOC 𝛽-W layer. The parent Co20⁢Fe60⁢B20/𝛽-W (CFB/⁢𝛽-W) bilayer exhibits large spin-to-charge interconversion efficiency, which can be ascribed to the interfacial SOC observed at the ferromagnet/heavy-metal interface. Further, the adsorption of C60 molecules on 𝛽-W reduces the effective Gilbert damping by  ∼15% in CFB/⁢𝛽-W/C60 heterostructures. The antidamping is accompanied by a gigantic  ∼115% enhancement in the spin-pumping-induced output voltage owing to molecular hybridization. The noncollinear density-functional-theory calculations confirm the long-range enhancement of the SOC of 𝛽-W upon the chemisorption of C60 molecules, which in turn can also enhance the SOC at the CFB/⁢𝛽-W interface in CFB/⁢𝛽-W/C60 heterostructures. The combined amplification of the bulk as well as the interfacial SOC upon molecular hybridization stabilizes the antidamping and enhanced spin-to-charge conversion, which can pave the way for the fabrication of power-efficient spintronic devices.

We are working at the Institute of Nano Science and Technology Mohali, one of the leading research institutes in India in the field of Nano Science. INST is located in Chandigarh, one of the major cities of India.

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